{"title":"硅分子异质结构中的负微分电阻","authors":"T. Rakshit, G. Liang, Avik W. Ghosh, S. Datta","doi":"10.1109/ISDRS.2003.1272064","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Negative differential resistance in silicon-molecule heterostructure\",\"authors\":\"T. Rakshit, G. Liang, Avik W. Ghosh, S. Datta\",\"doi\":\"10.1109/ISDRS.2003.1272064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Negative differential resistance in silicon-molecule heterostructure
This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.
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