内存技术实现下一次人工智能革命

Ranjana Godse, A. McPadden, Vipinchandra Patel, Jung Yoon
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引用次数: 7

摘要

人工智能(AI),特别是深度学习(DL)技术被用于实时分析、欺诈检测、自动驾驶和语音识别等。这些在云端和边缘的强大和数据密集型深度学习应用增加了深度神经网络(DNN)的复杂性。多层计算、内存和存储安排可以通过提供对大量数据的更快访问和优化成本,帮助推动人工智能应用。人工智能的内存需求与传统的工作负载大不相同,需要更快地访问数据。DRAM制造商面临着密度增长、成本和比特错误等挑战。高带宽内存(HBM)和GDDR有助于实现对内存的几乎实时访问。每一种存储器都有一定范围的系统权衡,如密度、功率效率和带宽。与传统存储器不同,像MRAM、相变存储器(PCM)、电阻式RAM (ReRAM)、碳纳米管RAM (NRAM)等持久存储器提供非易失性。持久内存有可能减少DRAM和存储器之间的延迟和成本差距。持久内存是一项很有前途的人工智能技术,但面临成本、可扩展性和可靠性方面的挑战。训练数据集越大,DNN的推理效果越好。这带来了巨大的存储需求。随着3D NAND层数的增加以及电路设计和工艺技术的创新,闪存可以实现多位TLC和QLC密度。PCIe总线和SSD提供低延迟和高吞吐量,使闪存成为人工智能存储的最佳解决方案。高宽高比通道蚀刻,阶梯接触,缺陷控制等是即将到来的flash一代的一些挑战。
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Memory Technology enabling the next Artificial Intelligence revolution
Artificial intelligence (AI), specifically Deep Learning (DL) techniques are used for real-time analytics, fraud detection, autonomous driving, and speech recognition etc. These power and data hungry DL applications on cloud and at edge has increased Deep Neural Network (DNN) complexity. Multi-tiered Compute, Memory and Storage arrangements can help push AI applications by providing faster access to high volume of data and optimizing cost. AI memory needs are quite different from traditional workloads, requiring faster access to data. DRAM manufacturers struggle with challenges like density growth, cost and bit errors. High Bandwidth Memory (HBM) and GDDR help achieve almost real time access to the memory. Each of these memories have range of system trade-offs such as density, power efficiency and bandwidth. Unlike traditional memory, Persistent memory like MRAM, Phase change memory (PCM), Resistive RAM (ReRAM), Carbon Nanotube RAM (NRAM) etc. provide non-volatility. Persistent memory has a potential to reduce the latency and cost gap between DRAM and Storage. Persistent Memory is a promising technology for driving AI but face challenges of cost, scaling and reliability. Bigger the training data set, better the inference drawn by DNN. This comes with a huge storage demand. With increase in layer count of 3D NAND and innovations in circuit design and process technology, flash enables multi-bit TLC and QLC densities. PCIe bus with SSD provides low latency and high throughput, making flash the most optimal solution for AI storage. High aspect ratio channel etch, staircase contacts, defect control etc. are some of the challenges with upcoming flash generations.
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