{"title":"光致抗蚀剂表层碳化的介质剂量注入的充电现象","authors":"H. Kamiyanagi, S. Shibata","doi":"10.1109/IWJT.2005.203883","DOIUrl":null,"url":null,"abstract":"In this paper, the correlation between the charging phenomena and the photo-resists material after medium dose implantation is reported. To investigate the characteristic change of the photo-resist after ion implantation, the photo-resist removal performance is studied by FT-IR and SEM cross-section image analysis. The result shows that carbonization of photo-resist is promoted by the ion implantation. Both i-line photo-resist and KrF photo-resist were studied. The Si wafer was covered by the 400nm SiO/sub 2/ film. The surface potential measurement results of photoresist coating on SiO/sub 2/ film for various implantations were investigated. The results suggest that the destruction of the finer device due to charging at medium dose implantation will occur more frequently as the resolution of photo-resist is improved by lowering the bonding energy.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist\",\"authors\":\"H. Kamiyanagi, S. Shibata\",\"doi\":\"10.1109/IWJT.2005.203883\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the correlation between the charging phenomena and the photo-resists material after medium dose implantation is reported. To investigate the characteristic change of the photo-resist after ion implantation, the photo-resist removal performance is studied by FT-IR and SEM cross-section image analysis. The result shows that carbonization of photo-resist is promoted by the ion implantation. Both i-line photo-resist and KrF photo-resist were studied. The Si wafer was covered by the 400nm SiO/sub 2/ film. The surface potential measurement results of photoresist coating on SiO/sub 2/ film for various implantations were investigated. The results suggest that the destruction of the finer device due to charging at medium dose implantation will occur more frequently as the resolution of photo-resist is improved by lowering the bonding energy.\",\"PeriodicalId\":307038,\"journal\":{\"name\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2005.203883\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist
In this paper, the correlation between the charging phenomena and the photo-resists material after medium dose implantation is reported. To investigate the characteristic change of the photo-resist after ion implantation, the photo-resist removal performance is studied by FT-IR and SEM cross-section image analysis. The result shows that carbonization of photo-resist is promoted by the ion implantation. Both i-line photo-resist and KrF photo-resist were studied. The Si wafer was covered by the 400nm SiO/sub 2/ film. The surface potential measurement results of photoresist coating on SiO/sub 2/ film for various implantations were investigated. The results suggest that the destruction of the finer device due to charging at medium dose implantation will occur more frequently as the resolution of photo-resist is improved by lowering the bonding energy.
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