/spl α /-粒子诱导的亚微米SOI SRAM软误差

1995 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1995-06-06 DOI:10.1109/VLSIT.1995.520849

Y. Tosaka, K. Suzuki, T. Sugii

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引用次数: 16

摘要

我们发现临界/spl α /-粒子诱导产生的电荷决定了SOI sram的软误差，并表明由于双极效应，无体接触的亚微米SOI sram的软错误率有时比本体sram的软错误率大。这表明有必要在SOI SRAM结构中采用身体接触或其他技术来减少双极效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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/spl alpha/-particle-induced soft errors in submicron SOI SRAM

We found the critical /spl alpha/-particle-induced generated charge which determines the soft errors in SOI SRAMs and showed that the soft error rate in submicron SOI SRAMs without body contacts is sometimes larger than that for bulk SRAMs due to the bipolar effect. This suggests the necessity for body contacts or for other technologies in SOI SRAM structures to reduce the bipolar effect.

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1995 Symposium on VLSI Technology. Digest of Technical Papers

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