Tertiarybutylarsine as a substitute for AsH3: application to InGaAs/InP photonic integrated circuits

It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH/sub 3/-grown layers. As a consequence conventional InGaAsP lasers at 1.3 mu m were grown by TBA and were found to have properties as good as those of AsH/sub 3/ lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH/sub 3/ are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.<>