PECVD SiO/sub x/覆盖的GaAs/Al/sub 0.54/Ga/sub 0.46/As多量子阱中的无杂质互扩散:氧化亚氮流动的影响

P. Deenapanray, H. Tan, J. Lengyel, A. Durandet, M. Gal, C. Jagadish
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引用次数: 1

摘要

采用SiO/sub / x/封顶,然后在950/spl℃下快速热退火,实现了GaAs/Al/sub 0.54/Ga/sub 0.46/As量子阱的无杂质空位互扩散。SiO/sub x/薄膜采用N/sub 2/O/SiH/sub 4/流在300/spl℃和20 W射频功率下等离子体沉积。不同的N/sub /O流量改变了盖层的化学计量特征。在所研究的样品中,上述过程允许高达/spl sim/15O meV的连续可变能量转移,同时仍然保持清晰的解析激子行为。混合的程度不仅由x控制,还由SiO/sub x/层的密度控制。因此,我们的研究结果表明,除了Ga在SiO/sub x/中的固溶性外,SiO/sub x/覆盖的MQW异质结构的混合还取决于Ga原子在氧化物帽中的迁移率。
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Impurity-free interdiffusion in GaAs/Al/sub 0.54/Ga/sub 0.46/As multiple quantum wells capped with PECVD SiO/sub x/: effect of nitrous oxide flow
Impurity-free vacancy interdiffusion of GaAs/Al/sub 0.54/Ga/sub 0.46/As quantum wells (QWs) was achieved using SiO/sub x/ capping followed by rapid thermal annealing at 950/spl deg/C. The SiO/sub x/ films were plasma deposited using N/sub 2/O/SiH/sub 4/ flow at 300/spl deg/C and 20 W rf power. The stoichiometry of capping layers were altered by varying the flowrate of N/sub 2/O. In the samples studied, the above process allows continuously variable energy shifts as high as /spl sim/15O meV while still maintaining clearly resolved excitonic behavior. The degree of intermixing is not controlled by x only but, also, by the density of the SiO/sub x/ layers, Our results, therefore, suggest that, in addition to the solid solubility of Ga in SiO/sub x/, intermixing in SiO/sub x/ capped MQW heterostructures depends on the mobility of Ga atoms in the oxide caps.
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