基于异步电路技术的改进三模冗余结构

Gong Rui, Chen Wei, Liu Fang, Dai Kui, W. Zhiying
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引用次数: 8

摘要

提出了两种基于异步电路技术的改进三模冗余(TMR)结构。双模冗余(DMR)结构采用异步C元输出并保持两个冗余存储单元的正确值。具有DCTREG的时空三模冗余结构(TSTMR-D)采用了显式分离的非同步管道主从锁存结构。采用中芯0.35 mm制程实现了3个软容错8051核,分别为DMR、TMR和TSTMR-D。断层注入实验也包括在内。实验结果表明,DMR结构比TMR结构具有相对较低的面积和延迟开销,并且在顺序逻辑上容忍seu。TSTMR-D结构可以容忍顺序逻辑和组合逻辑中的软错误,并且具有合理的面积和延迟开销
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Modified Triple Modular Redundancy Structure based on Asynchronous Circuit Technique
Two modified triple modular redundancy (TMR) structures based on asynchronous circuit technique are proposed in this paper. Double modular redundancy (DMR) structure uses asynchronous C element to output and keep the correct value of two redundant storage cells. Temporal spatial triple modular redundancy structure with DCTREG (TSTMR-D) uses explicit separated master and slave latch structure of de-synchronous pipeline. Three soft error tolerant 8051 cores with DMR, TMR and TSTMR-D respectively are implemented in SMIC 0.35mum process. Fault injection experiments are also included. The experiment results indicate that DMR structure has a relatively low overhead on both area and latency than TMR, while tolerances SEUs in sequential logic. TSTMR-D structures can tolerance soft errors in both sequential logic and combinational logic with reasonable area and latency overhead
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