一种全数字、符合vmax的稳定分布式电荷注入方案,用于快速缓解电压下降

S. Bang, M. Cho, P. Meinerzhagen, Andres F. Malavasi, M. Khellah, J. Tschanz, V. De
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引用次数: 2

摘要

在10nm FinFET CMOS测试芯片上制备了分布式电荷注入(CI)方案,该方案具有分布式vmax -投诉CI钳,分布式数字下垂检测器(DDDs)和分布式下垂控制器,用于快速缓解电压下垂。本地DDD在IP块的两个时钟周期内检测到附近的电压下降,并快速触发相关的CI钳,从高压轨(例如1.8 V)向VCC注入电荷,以立即缓解电压下降。局部下垂控制器通过在下垂消退后逐渐让稳压器接管,共同保证CI触发后的稳定运行。测量数据显示,均匀瞬态负载电流转换可降低高达45%的下垂,在1.0 V和2.0 GHz的热点负载电流转换可降低38%。与保护带基线相比,下垂减少可转化为功率节省约11%。
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An All-Digital, VMAX-Compliant, and Stable Distributed Charge Injection Scheme for Fast Mitigation of Voltage Droop
Distributed charge injection (CI) scheme featuring distributed VMAX-complaint CI clamps, distributed digital droop detectors (DDDs), and distributed droop controllers for fast mitigation of voltage droop is fabricated in 10-nm FinFET CMOS test-chip. A local DDD detects nearby voltage droop in two clock cycles of IP block, and quickly triggers associated CI clamps to inject charge from a high voltage rail (e.g., 1.8 V) to VCC for immediate voltage droop mitigation. Local droop controller collectively guarantees stable operation after CI is triggered, by gradually allowing the voltage regulator to take over after the droop subsides. Measured data shows droop reduction by up to 45% for a uniform transient load current transition, and by 38% in a hot-spot load current transition at 1.0 V and 2.0 GHz. The droop reduction is translated to power savings of ∼11% over a guard-banded baseline.
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