单元格内布局调整对三维LUT中单事件瞬变的影响

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857719

S. Azimi, C. De Sio, B. Du, L. Sterpone

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摘要

我们提出了一种通过放大敏感晶体管来分析和缓解3D集成电路单事件瞬态的工作流程。将该工作流程应用于45纳米3D LUT，结果显示故障率降低了37%。

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On the Mitigation of Single Event Transient in 3D LUT by In-Cell Layout Resizing

We propose a workflow for the analysis and mitigation of 3D ICs to Single Event Transient by upsizing the sensitive transistors. The workflow is applied to a 45-nm 3D LUT and the results show a 37% reduction in failure rate.

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2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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