交叉点阵列的ReRAM综合方法及选择器设计准则

Sangheon Lee, Sooeun Lee, Kibong Moon, Jaehyuk Park, Byungsub Kim, H. Hwang
{"title":"交叉点阵列的ReRAM综合方法及选择器设计准则","authors":"Sangheon Lee, Sooeun Lee, Kibong Moon, Jaehyuk Park, Byungsub Kim, H. Hwang","doi":"10.1109/IMW.2015.7150280","DOIUrl":null,"url":null,"abstract":"In this research, an one selector-one ReRAM (1S1R) cross-point array of a multi-level cell (MLC) was demonstrated and investigated. To expand high-density feasibility of cross-point array, MLC pulse writing and reading operations were assessed with parasitic line resistances and capacitances using Matlab and HSPICE simulations. We observed a switching energy is an important parameter for MLC in actual cross-point array in the operating point of view. In addition, not only ReRAM but also selector characteristics are highly important in the device point of view. Therefore, this study serves power efficient guidelines for 1S1R devices and operating schemes of cross-point array.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Comprehensive Methodology for ReRAM and Selector Design Guideline of Cross-point Array\",\"authors\":\"Sangheon Lee, Sooeun Lee, Kibong Moon, Jaehyuk Park, Byungsub Kim, H. Hwang\",\"doi\":\"10.1109/IMW.2015.7150280\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research, an one selector-one ReRAM (1S1R) cross-point array of a multi-level cell (MLC) was demonstrated and investigated. To expand high-density feasibility of cross-point array, MLC pulse writing and reading operations were assessed with parasitic line resistances and capacitances using Matlab and HSPICE simulations. We observed a switching energy is an important parameter for MLC in actual cross-point array in the operating point of view. In addition, not only ReRAM but also selector characteristics are highly important in the device point of view. Therefore, this study serves power efficient guidelines for 1S1R devices and operating schemes of cross-point array.\",\"PeriodicalId\":107437,\"journal\":{\"name\":\"2015 IEEE International Memory Workshop (IMW)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2015.7150280\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

在这项研究中,一个选择器-一个ReRAM (1S1R)交叉点阵列的多层次单元(MLC)进行了演示和研究。为了扩大交叉点阵列的高密度可行性,利用Matlab和HSPICE仿真,利用寄生线电阻和电容对MLC脉冲写入和读取操作进行了评估。从操作角度观察到开关能量是实际交叉点阵列中MLC的重要参数。此外,从器件的角度来看,不仅ReRAM,而且选择器的特性也非常重要。因此,本研究为1S1R器件和交叉点阵列的运行方案提供了能效指导。
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Comprehensive Methodology for ReRAM and Selector Design Guideline of Cross-point Array
In this research, an one selector-one ReRAM (1S1R) cross-point array of a multi-level cell (MLC) was demonstrated and investigated. To expand high-density feasibility of cross-point array, MLC pulse writing and reading operations were assessed with parasitic line resistances and capacitances using Matlab and HSPICE simulations. We observed a switching energy is an important parameter for MLC in actual cross-point array in the operating point of view. In addition, not only ReRAM but also selector characteristics are highly important in the device point of view. Therefore, this study serves power efficient guidelines for 1S1R devices and operating schemes of cross-point array.
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