Hang Hu, S. Ding, H.F. Lim, Chunxiang Zhu, M. Li, S.J. Kim, X.F. Yu, J.H. Chen, Y. F. Yong, B. Cho, D. Chan, S. Rustagi, M. Yu, C. Tung, A. Du, D. My, P.D. Foot, A. Chin, D. Kwong
{"title":"高性能ALD HfO/sub 2/-Al/sub 2/O/sub 3/层压式MIM电容器，适用于射频和混合信号IC应用","authors":"Hang Hu, S. Ding, H.F. Lim, Chunxiang Zhu, M. Li, S.J. Kim, X.F. Yu, J.H. Chen, Y. F. Yong, B. Cho, D. Chan, S. Rustagi, M. Yu, C. Tung, A. Du, D. My, P.D. Foot, A. Chin, D. Kwong","doi":"10.1109/IEDM.2003.1269303","DOIUrl":null,"url":null,"abstract":"In this paper, a high performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz to 20 GHz, low leakage current of 7.45/spl times/10/sup -9/ A/cm/sup 2/ at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"High performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for RF and mixed signal IC applications\",\"authors\":\"Hang Hu, S. Ding, H.F. Lim, Chunxiang Zhu, M. Li, S.J. Kim, X.F. Yu, J.H. Chen, Y. F. Yong, B. Cho, D. Chan, S. Rustagi, M. Yu, C. Tung, A. Du, D. My, P.D. Foot, A. Chin, D. Kwong\",\"doi\":\"10.1109/IEDM.2003.1269303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a high performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz to 20 GHz, low leakage current of 7.45/spl times/10/sup -9/ A/cm/sup 2/ at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for RF and mixed signal IC applications
In this paper, a high performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz to 20 GHz, low leakage current of 7.45/spl times/10/sup -9/ A/cm/sup 2/ at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.
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