{"title":"提高了高频掺杂BaTiO3作为闪存电荷捕获层的性能","authors":"X. Huang, P. Lai","doi":"10.1109/EDSSC.2013.6628237","DOIUrl":null,"url":null,"abstract":"BaTiO<sub>3</sub> with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO<sub>3</sub> CTL, the one with Hf-doped BaTiO<sub>3</sub> shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO<sub>3</sub>. Therefore, the Hf-doped BaTiO<sub>3</sub> is a promising candidate as CTL for flash memory application.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications\",\"authors\":\"X. Huang, P. Lai\",\"doi\":\"10.1109/EDSSC.2013.6628237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"BaTiO<sub>3</sub> with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO<sub>3</sub> CTL, the one with Hf-doped BaTiO<sub>3</sub> shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO<sub>3</sub>. Therefore, the Hf-doped BaTiO<sub>3</sub> is a promising candidate as CTL for flash memory application.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications
BaTiO3 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO3 CTL, the one with Hf-doped BaTiO3 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO3. Therefore, the Hf-doped BaTiO3 is a promising candidate as CTL for flash memory application.