紫外扫描监测SOI缺陷

C. Moulin, D. Delprat, C. Maleville, W. Mcmillan, J. Payne, K. Bird well, R. Brun, R. Moirin
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摘要

本文展示了新一代的检测系统如何使我们能够按照ITRS路线图的要求监测SOI;它还显示了我们可以收集的大量关键信息,为我们提供了关于SOI过程的重要反馈。
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UV scanning for SOI defectivity monitoring
This paper shows how a new generation of inspection system enables us to monitor SOI as requested in the ITRS roadmaps; it shows also the large amount of key information we can collect, giving us important feedback on the SOI process.
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