Chun-wang Zhuang, Xin Ming, Zijie Ye, Yao Qin, Zhikang Lin, W. Li, H. Yan, Bo Zhang
{"title":"具有预升压和鲁棒死区时间控制的单片fet控制GaN驱动器在dof激光雷达中的应用","authors":"Chun-wang Zhuang, Xin Ming, Zijie Ye, Yao Qin, Zhikang Lin, W. Li, H. Yan, Bo Zhang","doi":"10.1109/ISPSD57135.2023.10147581","DOIUrl":null,"url":null,"abstract":"For monolithic GaN LiDAR driver, in order to achieve high speed narrow pulse and low power consumption, pre-boosting and robust dead time (PBRD) control is proposed to enhance pull-up capability and limit short-through current during transient. A non-BGR under-voltage lockout (UVLO) is also provided for preventing the driver from operating in the event of supply voltage failure. Experimental results show that the proposed driver achieves peak load current of 10A and 2ns pulse width at the operation frequency of 20MHz. The fall and rise time of output pulse are 310ps and 334ps, respectively, and measured dynamic power is 80mW at the operation frequency of 10MHz.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic FET-Controlled GaN Driver with Pre-Boosting and Robust Dead Time Control for DToF LiDAR Application\",\"authors\":\"Chun-wang Zhuang, Xin Ming, Zijie Ye, Yao Qin, Zhikang Lin, W. Li, H. Yan, Bo Zhang\",\"doi\":\"10.1109/ISPSD57135.2023.10147581\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For monolithic GaN LiDAR driver, in order to achieve high speed narrow pulse and low power consumption, pre-boosting and robust dead time (PBRD) control is proposed to enhance pull-up capability and limit short-through current during transient. A non-BGR under-voltage lockout (UVLO) is also provided for preventing the driver from operating in the event of supply voltage failure. Experimental results show that the proposed driver achieves peak load current of 10A and 2ns pulse width at the operation frequency of 20MHz. The fall and rise time of output pulse are 310ps and 334ps, respectively, and measured dynamic power is 80mW at the operation frequency of 10MHz.\",\"PeriodicalId\":344266,\"journal\":{\"name\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"148 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD57135.2023.10147581\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147581","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic FET-Controlled GaN Driver with Pre-Boosting and Robust Dead Time Control for DToF LiDAR Application
For monolithic GaN LiDAR driver, in order to achieve high speed narrow pulse and low power consumption, pre-boosting and robust dead time (PBRD) control is proposed to enhance pull-up capability and limit short-through current during transient. A non-BGR under-voltage lockout (UVLO) is also provided for preventing the driver from operating in the event of supply voltage failure. Experimental results show that the proposed driver achieves peak load current of 10A and 2ns pulse width at the operation frequency of 20MHz. The fall and rise time of output pulse are 310ps and 334ps, respectively, and measured dynamic power is 80mW at the operation frequency of 10MHz.