{"title":"一个可靠的肖特基屏障高度提取程序","authors":"B. Tsui, Tze-Yu Fu","doi":"10.1109/ICMTS.2016.7476206","DOIUrl":null,"url":null,"abstract":"This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (~0.3 eV) and high doping concentration (~1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.","PeriodicalId":344487,"journal":{"name":"2016 International Conference on Microelectronic Test Structures (ICMTS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A reliable Schottky barrier height extraction procedure\",\"authors\":\"B. Tsui, Tze-Yu Fu\",\"doi\":\"10.1109/ICMTS.2016.7476206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (~0.3 eV) and high doping concentration (~1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.\",\"PeriodicalId\":344487,\"journal\":{\"name\":\"2016 International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2016.7476206\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2016.7476206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A reliable Schottky barrier height extraction procedure
This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (~0.3 eV) and high doping concentration (~1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.
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