扩展区氟注入对亚50nm p - mosfet电学性能的影响

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269327

H. Fukutome, Y. Momiyama, H. Nakao, T. Aoyama, H. Arimoto

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引用次数: 9

摘要

我们得出结论，在扩展区(f -盆)注入氟可以在不降低驱动电流的情况下显著改善Vth滚转特性。利用扫描隧道显微镜(STM)进行二维(2D)载流子分析，我们直接证实了这种器件性能的改善是由纳米尺度上重叠长度的减少和陡峭的横向陡度引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fluorine implantation impact in extension region on the electrical performance of sub-50nm P-MOSFETs

We conclude that fluorine implantation in the extension region (F-tub) makes the Vth roll-off characteristic dramatically improve without degrading the drive current. Using scanning tunneling microscopy (STM) for two-dimensional (2D) carrier profiling, we directly confirmed that such an improvement of the device performance was induced by the reduction of the overlap length and the steep lateral abruptness on the nanometer scale.

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IEEE International Electron Devices Meeting 2003

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