退火对双极器件后续辐射降解率的影响

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115476

A. Bakerenkov, A. Rodin, V. Pershenkov, V. Felitsyn, Yu D Bursian

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引用次数: 1

摘要

估计了辐照后退火对双极集成电路参数后续辐射降解率的影响。与退火前的辐照相比，辐照过程中降解率显著提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The impact of annealing on the following radiation degradation rate of bipolar devices

The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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