在SOI器件的精确分析I-V描述中纳入工程迁移模型

L. Lauwers, K. De Meyer
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摘要

提出了一种精确的全耗尽SOI MOS器件的电路仿真级迁移率模型。这为进一步优化特定薄膜性能奠定了坚实的基础。它基于局部半经验载流子迁移率模型。该模型可以包括所有可能的散射机制。它也可以用于低温范围,其中库仑散射占主导地位。一个令人满意且证明良好的多项式近似允许在电路仿真模型中实现载流子迁移率模型的局部特性。由于阈值电压与后门电压呈双曲正切关系,为薄膜SOI器件的精确模型奠定了基础。
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Incorporation of an engineering mobility model in an accurate analytical I-V description for SOI devices
An accurate circuit-simulation-level mobility model for fully depleted SOI MOS devices is presented. It forms a solid basis for further optimization of specific thin-film properties. It is based on a local semiempirical carrier mobility model. The model can include all possible scattering mechanisms. It can also be used for low temperature ranges, where Coulomb scattering is dominant. A satisfactory and well-proved polynomial approximation allows an implementation of the local character of the carrier mobility model in a circuit simulation model. With a hyperbolical tangent dependence of the threshold voltage on the back gate voltage, the basis is formed for an accurate model for thin-film SOI devices.<>
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