N/sub /O快速热氧化制备氮化氧栅极介质亚微米Nmosfet的电学特性和可靠性

[1991] 49th Annual Device Research Conference Digest Pub Date : 1900-01-01 DOI:10.1109/DRC.1991.664712

H. Hwang, W. Ting, D. Kwong, Jack C. Lee

{"title":"N/sub /O快速热氧化制备氮化氧栅极介质亚微米Nmosfet的电学特性和可靠性","authors":"H. Hwang, W. Ting, D. Kwong, Jack C. Lee","doi":"10.1109/DRC.1991.664712","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N/sub 2/O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and Reliability Characteristics of Submicron Nmosfet's with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O\",\"authors\":\"H. Hwang, W. Ting, D. Kwong, Jack C. Lee\",\"doi\":\"10.1109/DRC.1991.664712\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N/sub 2/O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide. >\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664712\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

只提供摘要形式。本文报道了在N/sub /O中生长氮化氮栅介质的亚微米nmosfet的电学特性和可靠性。与传统的快速热生长氧化物相比，氮化氧样品在热电子应力下的降解程度明显降低。根据寿命计算，氮化氧器件的寿命大约比对照氧化物的寿命长一个数量级。>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Electrical and Reliability Characteristics of Submicron Nmosfet's with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O

Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N/sub 2/O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide. >

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[1991] 49th Annual Device Research Conference Digest

自引率

0.00%

发文量