{"title":"用于先进PDP数据驱动IC的大块硅CDMOS技术","authors":"Qian Qinsong, Wu Hong, Li Haisong, Sun Weifeng","doi":"10.1109/ICSICT.2008.4734507","DOIUrl":null,"url":null,"abstract":"In this paper, the 2nd LEDMOS devices based on bulk silicon(BS) process for an advanced PDP data driver IC have been developed. Not only the on-state characteristics, but also the reliabilities of 2nd LEDMOS transistors such as hot carrier effect, Kirk effect issues are improved against the 1st LEDMOS. The devices can be realized by shrinking the cell size and partly changing the structure of the devices. And by applying the 2nd LEDMOS to the new PDP Driver IC, we have succeeded in reducing the die size of the IC to about 70% comparing with that of 1st one, but its number of output stages is increased by 1.33 times and the power dissipation of the new IC is reduced by more than 15% too.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bulk silicon CDMOS technology for an advanced PDP data drvier IC\",\"authors\":\"Qian Qinsong, Wu Hong, Li Haisong, Sun Weifeng\",\"doi\":\"10.1109/ICSICT.2008.4734507\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the 2nd LEDMOS devices based on bulk silicon(BS) process for an advanced PDP data driver IC have been developed. Not only the on-state characteristics, but also the reliabilities of 2nd LEDMOS transistors such as hot carrier effect, Kirk effect issues are improved against the 1st LEDMOS. The devices can be realized by shrinking the cell size and partly changing the structure of the devices. And by applying the 2nd LEDMOS to the new PDP Driver IC, we have succeeded in reducing the die size of the IC to about 70% comparing with that of 1st one, but its number of output stages is increased by 1.33 times and the power dissipation of the new IC is reduced by more than 15% too.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734507\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bulk silicon CDMOS technology for an advanced PDP data drvier IC
In this paper, the 2nd LEDMOS devices based on bulk silicon(BS) process for an advanced PDP data driver IC have been developed. Not only the on-state characteristics, but also the reliabilities of 2nd LEDMOS transistors such as hot carrier effect, Kirk effect issues are improved against the 1st LEDMOS. The devices can be realized by shrinking the cell size and partly changing the structure of the devices. And by applying the 2nd LEDMOS to the new PDP Driver IC, we have succeeded in reducing the die size of the IC to about 70% comparing with that of 1st one, but its number of output stages is increased by 1.33 times and the power dissipation of the new IC is reduced by more than 15% too.
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