用于低温和高通量D2W键合的受限imc

J. Derakhshandeh, D. La Tulipe, G. Capuz, V. Cherman, C. Gerets, T. Cochet, E. Shafahian, I. D. Preter, G. Jamieson, T. Webers, E. Beyne, G. Beyer, Andy Miller
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引用次数: 0

摘要

本文介绍了一种集成流程,用于IMC插入键合,实现了10um及以下间距的微凸点的堆叠。在低温TCB过程中,腔内受限的CoSn3预IMC凸起阻止了IMC的横向生长,并提供了Sn与锋利IMC晶粒之间的机械连接,改善了取向。对于20um、10um和7um螺距的凸点,单凸点连接的电产率可达95%。
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Confined IMCs for low temperature and high throughput D2W bonding
In this paper an integration flow is introduced for IMC insertion bonding, enabling stacking microbumps with 10um and below pitches. Confined CoSn3 pre-IMC bumps inside the cavities prevent lateral IMC growth and provide mechanical connection between Sn and sharp IMC grains during low temperature TCB process and improve the alignment. Electrical yield of 95% is obtained for single bumps connection of 20, 10 and 7um pitch bumps.
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