用于SiP的三维极薄堆叠封装技术

Y. Yano, T. Sugiyama, S. Ishihara, Y. Fukui, H. Juso, K. Miyata, Y. Sota, K. Fujita
{"title":"用于SiP的三维极薄堆叠封装技术","authors":"Y. Yano, T. Sugiyama, S. Ishihara, Y. Fukui, H. Juso, K. Miyata, Y. Sota, K. Fujita","doi":"10.1109/ECTC.2002.1008278","DOIUrl":null,"url":null,"abstract":"In order to achieve the greater compactness, lightness, high- and multi-functionality required of mobile equipment and other electronic devices, we have developed 3D packaging technology which enables free stacking, at the package level, of ultra-thin CSP (which contain 2 or 1 LSI chip(s)). By stacking at the package level, there are no yield problems, and it is easy to perform independent electrical testing, so it is possible to achieve multi-level stacking while freely combining different kinds of LSI chips like memory or ASIC. By making chips and resin molding thinner, lowering wire loops and optimizing the package structure, we achieved higher package density: a single unit (2 chips) package height of 0.55 mmMax., 2 layers (4 chips) with a unit package height of 1.0 mmMax., and 3 layers (6 chips) with a unit package height of 1.5 mmMax. This technology makes it possible to offer ultra-compact systems-in-package (logic + memory) and high-capacity composite memories.","PeriodicalId":285713,"journal":{"name":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"Three-dimensional very thin stacked packaging technology for SiP\",\"authors\":\"Y. Yano, T. Sugiyama, S. Ishihara, Y. Fukui, H. Juso, K. Miyata, Y. Sota, K. Fujita\",\"doi\":\"10.1109/ECTC.2002.1008278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to achieve the greater compactness, lightness, high- and multi-functionality required of mobile equipment and other electronic devices, we have developed 3D packaging technology which enables free stacking, at the package level, of ultra-thin CSP (which contain 2 or 1 LSI chip(s)). By stacking at the package level, there are no yield problems, and it is easy to perform independent electrical testing, so it is possible to achieve multi-level stacking while freely combining different kinds of LSI chips like memory or ASIC. By making chips and resin molding thinner, lowering wire loops and optimizing the package structure, we achieved higher package density: a single unit (2 chips) package height of 0.55 mmMax., 2 layers (4 chips) with a unit package height of 1.0 mmMax., and 3 layers (6 chips) with a unit package height of 1.5 mmMax. This technology makes it possible to offer ultra-compact systems-in-package (logic + memory) and high-capacity composite memories.\",\"PeriodicalId\":285713,\"journal\":{\"name\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2002.1008278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2002.1008278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 39

摘要

为了实现移动设备和其他电子设备所需的更紧凑,更轻,更高和多功能,我们开发了3D封装技术,可以在封装级别上自由堆叠超薄CSP(包含2或1个LSI芯片)。通过封装级的堆叠,没有良率问题,并且易于进行独立的电气测试,因此可以实现多层堆叠,同时自由组合存储器或ASIC等不同类型的LSI芯片。通过使芯片和树脂成型更薄,降低线圈和优化封装结构,我们实现了更高的封装密度:单个单元(2个芯片)封装高度为0.55 mmMax。, 2层(4片),单位封装高度1.0 mmMax。3层(6片),单位封装高度1.5 mmMax。这项技术使得提供超紧凑的系统级封装(逻辑+存储器)和高容量复合存储器成为可能。
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Three-dimensional very thin stacked packaging technology for SiP
In order to achieve the greater compactness, lightness, high- and multi-functionality required of mobile equipment and other electronic devices, we have developed 3D packaging technology which enables free stacking, at the package level, of ultra-thin CSP (which contain 2 or 1 LSI chip(s)). By stacking at the package level, there are no yield problems, and it is easy to perform independent electrical testing, so it is possible to achieve multi-level stacking while freely combining different kinds of LSI chips like memory or ASIC. By making chips and resin molding thinner, lowering wire loops and optimizing the package structure, we achieved higher package density: a single unit (2 chips) package height of 0.55 mmMax., 2 layers (4 chips) with a unit package height of 1.0 mmMax., and 3 layers (6 chips) with a unit package height of 1.5 mmMax. This technology makes it possible to offer ultra-compact systems-in-package (logic + memory) and high-capacity composite memories.
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