用于在时域和频域研究先进SiGe HBTs中BEOL热影响的专用测试结构

2016 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2016-03-28 DOI:10.1109/ICMTS.2016.7476168

R. D’Esposito, S. Frégonèse, T. Zimmer, A. Chakravorty

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引用次数: 6

摘要

本文介绍了在高功率应用的最先进的SiGe HBT技术中对后端线(BEOL)的热影响的研究。提出了一种递归RC网络来模拟BEOL的热行为，并在专用试验结构上进行了时域和频域的测量验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dedicated test-structures for investigation of the thermal impact of the BEOL in advanced SiGe HBTs in time and frequency domain

This paper presents a study on the thermal impact of the back-end-of-line (BEOL) in a state-of-the-art SiGe HBT technology for high power applications. A recursive RC network is proposed to model the thermal behavior of the BEOL and is validated with measurements on dedicated test-structures in the time and frequency domain.

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2016 International Conference on Microelectronic Test Structures (ICMTS)

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