{"title":"MBE生长的Si:GaAs, GaAs, AlGaAs和InGaAs薄膜的XRD表征","authors":"Dee Chang Fu, M.S. Jusoh, A. Mat, B. Y. Majlis","doi":"10.1109/SMELEC.2002.1217876","DOIUrl":null,"url":null,"abstract":"The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"XRD characterization of the MBE grown Si:GaAs, GaAs, AlGaAs, and InGaAs epilayer\",\"authors\":\"Dee Chang Fu, M.S. Jusoh, A. Mat, B. Y. Majlis\",\"doi\":\"10.1109/SMELEC.2002.1217876\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.\",\"PeriodicalId\":211819,\"journal\":{\"name\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2002.1217876\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217876","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
XRD characterization of the MBE grown Si:GaAs, GaAs, AlGaAs, and InGaAs epilayer
The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.
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