Michael Schmidt, H. Gottlob, J. Bolten, T. Wahlbrink, Heinrich Kurz
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Mobility extraction in sub 10nm nanowire nMOSFETs with gadolinium-silicate as gate dielectric
Gadolinium-silicate (GdSiO) as high-k dielectric in sub 10nm gate first nanowire (NW) nMOSFETs is investigated. NW- and UTB- nMOSFETs with conventional SiO2/Poly-Si gate stacks have been fabricated and compared with GdSiO/TiN NW nMOSFETs. Specific nMOSFETs with multiple NWs in parallel have been used to extract the effective mobility by split-CV method and to eliminate the series resistance to correct the measured data.
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