{"title":"工艺缺陷及其对栅极可靠性的影响","authors":"H. R. Bolin","doi":"10.1109/IRPS.1980.362949","DOIUrl":null,"url":null,"abstract":"Gate failures are a significant factor in FET field failures. The role of defects (especially particulates) in the gate (thin dielectric) reliability failures on PET's has been previously studied. However, little or no data has been reported on defect size distributions, siting information (where they are located) and density distributions over varying device sizes and topologies. In addition, little is known about correlation of all these parameters to accelerated life test failures. This study was initiated to help provide some of this information.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Process Defects and Effects on Mosfet Gate Reliability\",\"authors\":\"H. R. Bolin\",\"doi\":\"10.1109/IRPS.1980.362949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate failures are a significant factor in FET field failures. The role of defects (especially particulates) in the gate (thin dielectric) reliability failures on PET's has been previously studied. However, little or no data has been reported on defect size distributions, siting information (where they are located) and density distributions over varying device sizes and topologies. In addition, little is known about correlation of all these parameters to accelerated life test failures. This study was initiated to help provide some of this information.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362949\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process Defects and Effects on Mosfet Gate Reliability
Gate failures are a significant factor in FET field failures. The role of defects (especially particulates) in the gate (thin dielectric) reliability failures on PET's has been previously studied. However, little or no data has been reported on defect size distributions, siting information (where they are located) and density distributions over varying device sizes and topologies. In addition, little is known about correlation of all these parameters to accelerated life test failures. This study was initiated to help provide some of this information.
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