n型汞镉碲光电导探测器的光化学氧化研究及机理分析

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785972

Shi Yan-li, Shen Guang-di, Wu Xing-hui, Feng Wen-Qing, Chen Tie-Jin

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引用次数: 0

摘要

首次采用光化学氧化法代替阳极氧化法对n型汞镉碲(HgCdTe)光导探测器进行表面钝化处理。利用x射线光电子能谱(XPS)分析了氧化条件对氧化反应的影响。并对光化学氧化钝化机理进行了研究。比较了在相同工艺条件下分别采用阳极氧化和光化学氧化制备的两种探测器的性能，光化学氧化的结果略优于阳极氧化的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors

Instead of anodization, photochemical oxidation is used to perform the surface passivation of n-type mercury cadmium tellurium (HgCdTe) photoconductance detectors for the first time. X-ray photoelectron spectroscopy (XPS) is used to analyze the influence of the oxidation condition on the oxidation reaction. The passivation mechanism of photochemical oxidation is also studied. Comparing of the performances of the two kinds of detectors with each other, which were prepared under the same technique conditions by the anodization and the photochemical oxidation respectively, it shows that the results of photochemical oxidation is slightly superior to that of anodic oxidation.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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