GaN-HEMT与高压级联码的背门控段

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147630

R. Reiner, S. Moench, P. Waltereit, M. Basler, S. Müller, M. Mikulla, R. Quay

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引用次数: 0

摘要

这项工作介绍了GaN-on-Si技术中具有背门控段和下拉引脚的GaN-HEMT的设计，制造和测量。该器件设计用于高压级联码。该装置的静态和动态特性在三级混合级联组件中进行了演示。级联码在高达1250 V的阻塞电压下进行测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes

This work presents the design, fabrication, and measurements of a GaN-HEMT with a back-gated segment and pull-down pin in a GaN-on-Si technology. The device is designed for the use in high voltage cascodes. The static and dynamic characteristics of the device is demonstrated in a three-stage hybrid cascode assembly. The cascode was measured with a blocking voltage up to 1250 V.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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