J. Anguita, C. Perello, M. Lozano, C. Cané, E. Lora-Tamayo
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Measurement of lateral diffusion on technologies with polysilicon doping source with misalignment correction
A novel test structure consisting of a varying length depletion IGFET (insulated-gate field effect transistor) with a shorted polysilicon gate-source junction is presented. This structure makes it possible to extract an effective channel length from an electrical measurement and, as a result, the amount of lateral diffusion on its source junction is extracted. A particular arrangement of the gate and source shorts is selected to eliminate misalignment errors.<>
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