{"title":"后电阻跃迁SiO2薄膜的光谱电学特性","authors":"R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura","doi":"10.1109/IMFEDK.2014.6867074","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Spectroscopic electrical characterization of post-resistive-transition SiO2 films\",\"authors\":\"R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura\",\"doi\":\"10.1109/IMFEDK.2014.6867074\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867074\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Spectroscopic electrical characterization of post-resistive-transition SiO2 films
This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
