{"title":"微波功率放大的InP MISFET能力","authors":"P. Fellon, J. De Jaeger, Y. Crosnier","doi":"10.1109/ICIPRM.1990.203039","DOIUrl":null,"url":null,"abstract":"A theoretical study to establish the behavior and the power amplification capabilities of the InP MISFET is described. Two numerical models are used. The first model is a two-dimensional simulation based on Poisson's equation, and the current equation is supposed equal to zero. A second simulation uses a pseudo-two-dimensional model and entails a lighter computational burden. The validity of the results is verified by experimental measurements. Results obtained for the maximum drain current, the breakdown voltage, and the microwave properties show that the InP MISFET is a very interesting alternative for microwave power amplification.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InP MISFET capabilities for microwave power amplification\",\"authors\":\"P. Fellon, J. De Jaeger, Y. Crosnier\",\"doi\":\"10.1109/ICIPRM.1990.203039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A theoretical study to establish the behavior and the power amplification capabilities of the InP MISFET is described. Two numerical models are used. The first model is a two-dimensional simulation based on Poisson's equation, and the current equation is supposed equal to zero. A second simulation uses a pseudo-two-dimensional model and entails a lighter computational burden. The validity of the results is verified by experimental measurements. Results obtained for the maximum drain current, the breakdown voltage, and the microwave properties show that the InP MISFET is a very interesting alternative for microwave power amplification.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP MISFET capabilities for microwave power amplification
A theoretical study to establish the behavior and the power amplification capabilities of the InP MISFET is described. Two numerical models are used. The first model is a two-dimensional simulation based on Poisson's equation, and the current equation is supposed equal to zero. A second simulation uses a pseudo-two-dimensional model and entails a lighter computational burden. The validity of the results is verified by experimental measurements. Results obtained for the maximum drain current, the breakdown voltage, and the microwave properties show that the InP MISFET is a very interesting alternative for microwave power amplification.<>
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