基于PSP的DCG-FGT晶体管模型，包括表征过程

2011 18th IEEE International Conference on Electronics, Circuits, and Systems Pub Date : 2011-12-01 DOI:10.1109/ICECS.2011.6122255

Abderrezak Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour

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引用次数: 4

摘要

提出了一种新的DCG-FGT(双控栅浮栅晶体管)晶体管模型，用于静态和瞬态仿真。PSP MOS描述被用作导通通道行为公式的基础。浮栅电位隐式地计算了外加的电荷中性关系，保证了良好的收敛性。该模型在电子模拟器(ELDO)下运行，并利用ICCAP软件对其进行表征。它已在先进的意法半导体技术上得到验证。这项工作的最终目标是在设计框架中提供一个准确的、可扩展的模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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PSP based DCG-FGT transistor model including characterization procedure

A new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The PSP MOS description is used as a basis for the formulation of the conduction channel behavior. The floating gate potential is implicitly computed with an added charge neutrality relation that ensures a good convergence. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is to provide an accurate and scalable model available in design framework.

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2011 18th IEEE International Conference on Electronics, Circuits, and Systems

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