V.F. Drobny, C. Hacherl, S. Dotarrar, T. Yamaguchi, A. Tang, Y. Yu
{"title":"平面化自对准双多晶硅双极技术","authors":"V.F. Drobny, C. Hacherl, S. Dotarrar, T. Yamaguchi, A. Tang, Y. Yu","doi":"10.1109/BIPOL.1988.51059","DOIUrl":null,"url":null,"abstract":"The combination of self-aligned double-polysilicon bipolar technology with the trench isolation technique and planarized field oxide and polysilicon regions results in a high-performance bipolar VLSI process, planarized at all mask levels. The planarization approach simplifies photolithography. It also eliminates deformation and discontinuities of polysilicon lines over severe topography and problems with polysilicon residue after RIE steps. A SWAMI process is used to define and isolate both polysilicon layers.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Planarized self-aligned double-polysilicon bipolar technology\",\"authors\":\"V.F. Drobny, C. Hacherl, S. Dotarrar, T. Yamaguchi, A. Tang, Y. Yu\",\"doi\":\"10.1109/BIPOL.1988.51059\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The combination of self-aligned double-polysilicon bipolar technology with the trench isolation technique and planarized field oxide and polysilicon regions results in a high-performance bipolar VLSI process, planarized at all mask levels. The planarization approach simplifies photolithography. It also eliminates deformation and discontinuities of polysilicon lines over severe topography and problems with polysilicon residue after RIE steps. A SWAMI process is used to define and isolate both polysilicon layers.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51059\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51059","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The combination of self-aligned double-polysilicon bipolar technology with the trench isolation technique and planarized field oxide and polysilicon regions results in a high-performance bipolar VLSI process, planarized at all mask levels. The planarization approach simplifies photolithography. It also eliminates deformation and discontinuities of polysilicon lines over severe topography and problems with polysilicon residue after RIE steps. A SWAMI process is used to define and isolate both polysilicon layers.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
