纳米晶Si中Er和Yb离子之间4f-4f耦合的掺杂密度依赖性

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416664

Xinwei Zhao, K. Kohno, S. Harako, N. Takahashi, S. Komuro

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引用次数: 0

摘要

本文介绍了铒镱共掺杂纳米硅薄膜的形成和时间分辨研究。由于Yb/sup 3+/离子的唯一激发态/sup 2/F/sub 5/2/的能量与Er/sup 3-/离子的第二激发态/sup 4/I/sub 11/2/的能量几乎相同，因此它们之间的光跃迁有望提高Er/sup 3+/离子的激发速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Doping density dependence of 4f-4f couplings between Er and Yb ions in nanocrystalline Si

This paper presents the formation and time-resolved investigation of Er and Yb co-doped nc-Si thin films. Since the energy of the only one excited state /sup 2/F/sub 5/2/ of a Yb/sup 3+/ ion is almost same to that of the second excited state /sup 4/I/sub 11/2/ of an Er/sup 3-/ ion, the optical transition between them is expected to raise the excitation rate of the Er/sup 3+/ ion.

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First IEEE International Conference on Group IV Photonics, 2004.

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