Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, G. Leake, D. Harame, J. Bowers
{"title":"在cmos兼容的300毫米硅光子晶圆上生长的量子点激光器","authors":"Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, G. Leake, D. Harame, J. Bowers","doi":"10.1109/CSW55288.2022.9930373","DOIUrl":null,"url":null,"abstract":"We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum-Dot Lasers Grown on CMOS-compatible 300 mm Si Photonic Wafers\",\"authors\":\"Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, G. Leake, D. Harame, J. Bowers\",\"doi\":\"10.1109/CSW55288.2022.9930373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum-Dot Lasers Grown on CMOS-compatible 300 mm Si Photonic Wafers
We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.
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