{"title":"65nm及以上节点的USJ形成与表征","authors":"J. Borland","doi":"10.1109/IWJT.2004.1306746","DOIUrl":null,"url":null,"abstract":"Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"USJ formation & characterization for 65nm node and beyond\",\"authors\":\"J. Borland\",\"doi\":\"10.1109/IWJT.2004.1306746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
USJ formation & characterization for 65nm node and beyond
Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.
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