S. Feld, F. Beyette, X. An, H.Y. Lee, M. Hafich, G. Y. Robinson, C. Wilmsen
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High gain InP/InGaAs phototransistor/LED optical amplifier
Analytical and experimental results for a single-stack optical amplifier to be used in optoelectronic integrated circuits are presented. The device consists of a heterojunction phototransistor (HPT) integrated with a double-heterojunction light-emitting diode (LED) and has been named the light-amplifying optical switch (LAOS). Both components of the LAOS were fabricated separately out of InGaAs/InP grown by gas-source molecular beam epitaxy and found to function as expected. The HPT had a high current gain, and the LED had an emission spectrum centered around 1.7 mu m. The first complete LAOS device has been fabricated and tested. The basic design methodology, device operation, and device characteristics are presented.<>
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