K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh, H. Fujishiro
{"title":"通道应变对应变al0.40 in0.60 sb /Al0.25In0.75Sb阶梯缓冲Ga1-xInxSb HEMT结构电子输运性质的影响","authors":"K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh, H. Fujishiro","doi":"10.1109/CSW55288.2022.9930363","DOIUrl":null,"url":null,"abstract":"We investigated the effect of strain in channel on the electron transport properties of Ga<inf>1-</inf><inf>x</inf>In<inf>x</inf>Sb channel HEMT structures (x = 0.60, 0.78, 0.85, 0.90 and 0.94) with the strained-Al<inf>0.40</inf>In<inf>0.60</inf>Sb/Al<inf>0.25</inf>In<inf>0.75</inf>Sb stepped buffer. The strain in Ga<inf>1-</inf><inf>x</inf>In<inf>x</inf>Sb channel is determined by the Al<inf>0.25</inf>In<inf>0.75</inf>Sb lower buffer. The electron mobility (μ) showed the maximum value at x = 0.78 (unstrained). The sheet electron density (N<inf>s</inf>) showed the maximum value at x = 0.60 (tensile strained) due to the deepest quantum well. We obtained the minimum sheet resistance (R<inf>s</inf>) of 202 Ω/□ for the Ga<inf>0.22</inf>In<inf>0.78</inf>Sb channel. The μ may reach nearly 30,000 cm<sup>2</sup>/Vs by reducing threading dislocation density.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer\",\"authors\":\"K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh, H. Fujishiro\",\"doi\":\"10.1109/CSW55288.2022.9930363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the effect of strain in channel on the electron transport properties of Ga<inf>1-</inf><inf>x</inf>In<inf>x</inf>Sb channel HEMT structures (x = 0.60, 0.78, 0.85, 0.90 and 0.94) with the strained-Al<inf>0.40</inf>In<inf>0.60</inf>Sb/Al<inf>0.25</inf>In<inf>0.75</inf>Sb stepped buffer. The strain in Ga<inf>1-</inf><inf>x</inf>In<inf>x</inf>Sb channel is determined by the Al<inf>0.25</inf>In<inf>0.75</inf>Sb lower buffer. The electron mobility (μ) showed the maximum value at x = 0.78 (unstrained). The sheet electron density (N<inf>s</inf>) showed the maximum value at x = 0.60 (tensile strained) due to the deepest quantum well. We obtained the minimum sheet resistance (R<inf>s</inf>) of 202 Ω/□ for the Ga<inf>0.22</inf>In<inf>0.78</inf>Sb channel. The μ may reach nearly 30,000 cm<sup>2</sup>/Vs by reducing threading dislocation density.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
We investigated the effect of strain in channel on the electron transport properties of Ga1-xInxSb channel HEMT structures (x = 0.60, 0.78, 0.85, 0.90 and 0.94) with the strained-Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer. The strain in Ga1-xInxSb channel is determined by the Al0.25In0.75Sb lower buffer. The electron mobility (μ) showed the maximum value at x = 0.78 (unstrained). The sheet electron density (Ns) showed the maximum value at x = 0.60 (tensile strained) due to the deepest quantum well. We obtained the minimum sheet resistance (Rs) of 202 Ω/□ for the Ga0.22In0.78Sb channel. The μ may reach nearly 30,000 cm2/Vs by reducing threading dislocation density.
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