CMOS宽带放大器的设计与优化

F. Op't Eynde, W. Sansen
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引用次数: 24

摘要

几种CMOS放大器类型进行了比较和优化的高频应用。推导了功耗作为增益带宽、负载电容和第二极的函数的标度规律。结果表明,对现有电路进行微小的修改可以节省两倍以上的功耗。提出了一种3 μm宽带放大器,增益带宽为150 mhz,相位裕度为60°,负载电容为2 pF,功耗为30 mW
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Design and optimisation of CMOS wideband amplifiers
Several CMOS amplifier types are compared and optimized for high-frequency applications. Scaling laws are derived for the power consumption as a function of the gain bandwidth, the load capacitance and the second pole. It is shown that minor modifications on existing circuits can save over a factor of two of power consumption. A 3-μm wideband amplifier is presented with 150-MHz gain-bandwidth and 60° phase margin and with 30 mW of power consumption for a load capacitance of 2 pF
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