一个1.7伏操作CMOS 64K位E/sup 2/ PROM

Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI:10.1109/VLSIC.1989.1037480

Y. Wada, T. Maruyama, M. Chida, S. Takeda, K. Shinada, K. Sekiguchi, V. Suzuki, K. Kanzaki, M. Wada, M. Yoshizawa

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引用次数: 5

摘要

低功耗的E'PROM是必要的。二是CMOS专用集成电路领域。ASIC的重要关键因素是各种应用的技术通用性和快速周转时间(QTAT)。CMOS Is1的功耗极低，工作电压范围比器件器件更宽。从电气性能的角度来看，这些是将ASIC应用于各种应用时最可取的功能。对于QTAT，电路

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A 1.7 volts operating CMOS 64K bit E/sup 2/ PROM

and low power consumption E'PROM is necessary. The other is the field of the CMOS ASIC. Important key factors in ASIC are technological versatility for various applications and quick turn around time (QTAT). A CMOS Is1 comumes extremely lower power and operates at wider Operating voltage range than the o t h a device onen. From an electrical performance point of view, these are the mcet preferable features when applying ASIC to various applications. For QTAT, incircuit

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Symposium 1989 on VLSI Circuits

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