采用40/50μm间距CuSn微碰撞配置的3D面对面堆叠测试车的工艺相关挑战

L. Bogaerts, J. de Vos, C. Gerets, G. Jamieson, K. Vandersmissen, A. L. Manna
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引用次数: 3

摘要

转向3D集成电路技术有几个动机。其中一个关键因素是性能增强,这可以通过IC的进一步小型化来实现。随着越来越多的功能需要在更小的占地面积上实现,3D堆叠是一个非常有价值的解决方案。使用微凸点、铜柱和tsv的多芯片集成方案的增加,在凸点均匀性、高度、轮廓和间距方面提出了严格的要求,这使得3D堆叠具有指数级的挑战性。在本文中,我们介绍了实现50μm及以下间距微凸点的一些挑战。我们还提出了流程优化,以实现测试车辆的3D面对面堆叠。通过在电镀前添加等离子体处理,证明了凹凸镀的改进。优化后的碰撞工艺已通过剪切试验和三维堆的电学表征得到验证。
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Process related challenges for 3D face to face stacking test vehicles using a 40/50μm pitch CuSn microbump configuration
There are several motivations for moving to 3D IC technology. One of the key factors is performance enhancement which can be achieved by further miniaturization of the IC. As more and more functionality is required on a smaller footprint, 3D stacking is a very valuable solution. The increased use of multi-chip integration schemes that use microbumps, Cu pillars and TSVs introduces however severe requirements in term of bump uniformity, height, profile and pitch making 3D stacking exponentially challenging. In this paper we introduce some of the challenges to enable microbumps with pitch of 50μm and below. We also propose process optimizations to enable 3D face to face stacking of a test vehicle. An improvement of the bump plating has been demonstrated by adding a plasma treatment prior to plating. The optimized bumping process has been validated by shear test and electrical characterization of 3D stacks.
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