VCSEL中用于横向模式控制的微点

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930463

Jiaxing Wang, Yipeng Ji, Zhuokai Yang, Huawen Hu, Fangzhou Li, Jianqiang Chen, Chihchiang Shen, C. Chang-Hasnain

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引用次数: 0

摘要

直径为2um，厚度为120nm的SiN微点的VCSEL器件在0阶模式上表现出很强的20dB模式抑制。所得光谱均方根从0.65nm显著降低到0.47nm。经过100米光纤传输，获得了优异的PAM4 53Gbps眼图。

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Microdot for transverse mode control in VCSEL

The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0th-order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber transmission.

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2022 Compound Semiconductor Week (CSW)

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