{"title":"近空间升华法制备cdse薄膜的结构和表面研究","authors":"D. Duca, T. Potlog, M. Dobromir, V. Nica","doi":"10.1109/SMICND.2015.7355230","DOIUrl":null,"url":null,"abstract":"CdSe thin films have been prepared by close spaced sublimation technique. The deposited films have been characterized by Scanning Electronic Microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Structural investigations showed that studied samples are polycrystalline and have a hexagonal (wurtzite)) structure. Surface morphology studies SEM shows that the nanograins are uniformly distributed over the entire surface and depends on the substrate temperature. The XPS analysis of CdSe thin films indicates the formation on the surface of the CdO oxide.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and surface studies of the cdse thin films deposited by close space sublimation method\",\"authors\":\"D. Duca, T. Potlog, M. Dobromir, V. Nica\",\"doi\":\"10.1109/SMICND.2015.7355230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CdSe thin films have been prepared by close spaced sublimation technique. The deposited films have been characterized by Scanning Electronic Microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Structural investigations showed that studied samples are polycrystalline and have a hexagonal (wurtzite)) structure. Surface morphology studies SEM shows that the nanograins are uniformly distributed over the entire surface and depends on the substrate temperature. The XPS analysis of CdSe thin films indicates the formation on the surface of the CdO oxide.\",\"PeriodicalId\":325576,\"journal\":{\"name\":\"2015 International Semiconductor Conference (CAS)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2015.7355230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural and surface studies of the cdse thin films deposited by close space sublimation method
CdSe thin films have been prepared by close spaced sublimation technique. The deposited films have been characterized by Scanning Electronic Microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Structural investigations showed that studied samples are polycrystalline and have a hexagonal (wurtzite)) structure. Surface morphology studies SEM shows that the nanograins are uniformly distributed over the entire surface and depends on the substrate temperature. The XPS analysis of CdSe thin films indicates the formation on the surface of the CdO oxide.