硅光子学用锗光电二极管热失控特性研究

2020 IEEE 29th North Atlantic Test Workshop (NATW) Pub Date : 2020-06-01 DOI:10.1109/NATW49237.2020.9153080

S. Rauch, Dongho Lee, A. Vert, Roy Gupta

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摘要

在高应力条件下，研究了作为硅光子技术o波段$(\lambda\sim\mathbf{1300\ nm})$光电探测器组件的锗PIN光电二极管的热失控功率限制。采用简化模型对使用工况进行投影。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of Thermal Runaway in a Ge Photodiode for Si Photonics

The power limits due to thermal runaway of a germanium PIN photodiode as the O-band $(\lambda\sim\mathbf{1300\ nm})$ photodetector component of a silicon photonics technology were characterized under elevated stress conditions. A simplified model is used to project to use condition.

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2020 IEEE 29th North Atlantic Test Workshop (NATW)

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