{"title":"v波段2 × 2双极化介质谐振器天线阵列的设计","authors":"Ta-Yeh Lin, T. Chiu, D. Chang","doi":"10.1109/EDAPS.2016.7893145","DOIUrl":null,"url":null,"abstract":"A high gain V-band on-chip 2×2 dual-polarization dielectric resonator antenna (DRA) array in silicon substrate based on Integrated Passive Device (IPD) technology is presented in the paper. In the proposed structure, dielectric resonator (DR) was fed by using wire-bond structures for bandwidth and antenna efficiency improvement. The simulation and measurement regarding the DRA element reflection coefficient and isolation are conducted for design validation. The simulated results show that the antenna can operate in V-band, and the impedance bandwidth with |S11| less than −10 dB is from 55.7 GHz to 65.8 GHz. The peak gain is 10.3 dBi. The proposed design is well suited for System-in-Package millimeter-wave radio front-ends.","PeriodicalId":191549,"journal":{"name":"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a V-band 2 × 2 dual-polarization dielectric resonator antenna array\",\"authors\":\"Ta-Yeh Lin, T. Chiu, D. Chang\",\"doi\":\"10.1109/EDAPS.2016.7893145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high gain V-band on-chip 2×2 dual-polarization dielectric resonator antenna (DRA) array in silicon substrate based on Integrated Passive Device (IPD) technology is presented in the paper. In the proposed structure, dielectric resonator (DR) was fed by using wire-bond structures for bandwidth and antenna efficiency improvement. The simulation and measurement regarding the DRA element reflection coefficient and isolation are conducted for design validation. The simulated results show that the antenna can operate in V-band, and the impedance bandwidth with |S11| less than −10 dB is from 55.7 GHz to 65.8 GHz. The peak gain is 10.3 dBi. The proposed design is well suited for System-in-Package millimeter-wave radio front-ends.\",\"PeriodicalId\":191549,\"journal\":{\"name\":\"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDAPS.2016.7893145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2016.7893145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a V-band 2 × 2 dual-polarization dielectric resonator antenna array
A high gain V-band on-chip 2×2 dual-polarization dielectric resonator antenna (DRA) array in silicon substrate based on Integrated Passive Device (IPD) technology is presented in the paper. In the proposed structure, dielectric resonator (DR) was fed by using wire-bond structures for bandwidth and antenna efficiency improvement. The simulation and measurement regarding the DRA element reflection coefficient and isolation are conducted for design validation. The simulated results show that the antenna can operate in V-band, and the impedance bandwidth with |S11| less than −10 dB is from 55.7 GHz to 65.8 GHz. The peak gain is 10.3 dBi. The proposed design is well suited for System-in-Package millimeter-wave radio front-ends.
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