SiC高压技术的现状及未来展望

2018 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2018-12-01 DOI:10.1109/IEDM.2018.8614480

A. Mihaila, L. Knoll, E. Bianda, M. Bellini, S. Wirths, G. Alfieri, L. Kranz, F. Canales, Munaf T. A. Rahimo

{"title":"SiC高压技术的现状及未来展望","authors":"A. Mihaila, L. Knoll, E. Bianda, M. Bellini, S. Wirths, G. Alfieri, L. Kranz, F. Canales, Munaf T. A. Rahimo","doi":"10.1109/IEDM.2018.8614480","DOIUrl":null,"url":null,"abstract":"This paper reviews the recent progress of SiC MOSFETs rated above 3.3kV. The static and dynamic performance of 3.3 and 6.5kV-rated MOSFETs will be evaluated and benchmarked against similarly rated state-of-the-art Si IGBTs. A numerical comparison between high voltage (15kV) SiC MOSFETs and IGBTs will also be provided. The paper will also attempt to comment on the future challenges facing high voltage (HV) devices in SiC technology.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"The current status and future prospects of SiC high voltage technology\",\"authors\":\"A. Mihaila, L. Knoll, E. Bianda, M. Bellini, S. Wirths, G. Alfieri, L. Kranz, F. Canales, Munaf T. A. Rahimo\",\"doi\":\"10.1109/IEDM.2018.8614480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the recent progress of SiC MOSFETs rated above 3.3kV. The static and dynamic performance of 3.3 and 6.5kV-rated MOSFETs will be evaluated and benchmarked against similarly rated state-of-the-art Si IGBTs. A numerical comparison between high voltage (15kV) SiC MOSFETs and IGBTs will also be provided. The paper will also attempt to comment on the future challenges facing high voltage (HV) devices in SiC technology.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

本文综述了3.3kV以上SiC mosfet的研究进展。3.3和6.5 kv额定mosfet的静态和动态性能将与同等额定的最先进Si igbt进行评估和基准测试。还将提供高压(15kV) SiC mosfet和igbt之间的数值比较。本文还将尝试对SiC技术中高压(HV)器件面临的未来挑战进行评论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The current status and future prospects of SiC high voltage technology

This paper reviews the recent progress of SiC MOSFETs rated above 3.3kV. The static and dynamic performance of 3.3 and 6.5kV-rated MOSFETs will be evaluated and benchmarked against similarly rated state-of-the-art Si IGBTs. A numerical comparison between high voltage (15kV) SiC MOSFETs and IGBTs will also be provided. The paper will also attempt to comment on the future challenges facing high voltage (HV) devices in SiC technology.

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2018 IEEE International Electron Devices Meeting (IEDM)

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