光晕注入中BF2、Ga和in掺杂物的表征

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI:10.1109/IWJT.2013.6644509

Y. Matsunaga, Siti Rahmah Binti Aid, S. Matsumoto, J. Borland, M. Tanjyo

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引用次数: 1

摘要

中电流离子注入已被应用于晕注入。铟(In)被用于晕植入以抑制短通道效应[1]。近年来，中电流植入剂低温离子注入的优势被报道[2]。他们发现低温BF2植入体改善了短通道滚转特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of BF2, Ga and in dopants in Si for halo implantation

Ion implantation with medium current implants has been applied for halo implantation. Indium (In) has been used for halo implantation for suppression of short channel effect [1]. Recently, the advantage of cryogenic ion implantation with medium current implanters has been reported [2]. They showed that the cryogenic BF2 implant improved the short channel rolloff characteristics.

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2013 13th International Workshop on Junction Technology (IWJT)

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