{"title":"过程表征中非常低电流的简单评估","authors":"P. Girard, P. Nouet, F. M. Roche","doi":"10.1109/ICMTS.1990.161719","DOIUrl":null,"url":null,"abstract":"A test structure dedicated to the evaluation of very low currents for MOS process characterization is presented. The device consists of an amplifier plus a bias voltage set implemented on the chip and connected to the leaky element. The principle is given, and SPICE simulations, based on 2- mu m CMOS industrial technology, show the structure response. Owing to this structure, a strong current amplification is obtained. Consequently, only a classical transistor parameter analyzer is required to evaluate currents in the fA range.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Simple evaluation of very low currents in process characterization\",\"authors\":\"P. Girard, P. Nouet, F. M. Roche\",\"doi\":\"10.1109/ICMTS.1990.161719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A test structure dedicated to the evaluation of very low currents for MOS process characterization is presented. The device consists of an amplifier plus a bias voltage set implemented on the chip and connected to the leaky element. The principle is given, and SPICE simulations, based on 2- mu m CMOS industrial technology, show the structure response. Owing to this structure, a strong current amplification is obtained. Consequently, only a classical transistor parameter analyzer is required to evaluate currents in the fA range.<<ETX>>\",\"PeriodicalId\":417292,\"journal\":{\"name\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.161719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
提出了一种用于评价MOS工艺特性的极低电流的测试结构。该器件包括放大器和在芯片上实现并连接到漏电元件的偏置电压组。给出了其工作原理，并基于2 μ m CMOS工业技术进行了SPICE仿真，验证了其结构响应。由于这种结构，获得了强电流放大。因此，只需要一个经典的晶体管参数分析仪来评估fA范围内的电流
Simple evaluation of very low currents in process characterization
A test structure dedicated to the evaluation of very low currents for MOS process characterization is presented. The device consists of an amplifier plus a bias voltage set implemented on the chip and connected to the leaky element. The principle is given, and SPICE simulations, based on 2- mu m CMOS industrial technology, show the structure response. Owing to this structure, a strong current amplification is obtained. Consequently, only a classical transistor parameter analyzer is required to evaluate currents in the fA range.<>
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