TiN/Ti/HfO2/W忆阻器的制造、表征和建模:基于外部电容放电的编程

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI:10.1109/CDE52135.2021.9455756

F. Jiménez-Molinos, H. García, M. González, S. Dueñas, H. Castán, E. Miranda, F. Campabadal, J. Roldán

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引用次数: 0

摘要

制作了基于氧化铪的忆阻器，并利用电容放电电流驱动器件实现了多电平编程。此外，采用动态mem二极管模型对实验数据进行建模和分析。

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Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge

Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.

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2021 13th Spanish Conference on Electron Devices (CDE)

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