{"title":"离子注入对发光FeSi/sub - 2/浅结的影响","authors":"L. Chou, H. Lu, L. Chen, J. Huang","doi":"10.1109/IWJT.2004.1306844","DOIUrl":null,"url":null,"abstract":"Effects of ion-implantation and substrate orientation on nanostructures and photoluminescence (PL) of the ultra-thin /spl beta/-FeSi/sub 2/ films were investigated. Ion-implantation was found to enhance the formation of /spl beta/-FeSi/sub 2/. PL characteristics were strongly affected by implantation species and substrate orientation. The strongest intensity of PL was observed in epitaxial /spl beta/-FeSi/sub 2/ ultra-thin films on BF/sub 2//sup +/-implanted (111)Si.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction\",\"authors\":\"L. Chou, H. Lu, L. Chen, J. Huang\",\"doi\":\"10.1109/IWJT.2004.1306844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects of ion-implantation and substrate orientation on nanostructures and photoluminescence (PL) of the ultra-thin /spl beta/-FeSi/sub 2/ films were investigated. Ion-implantation was found to enhance the formation of /spl beta/-FeSi/sub 2/. PL characteristics were strongly affected by implantation species and substrate orientation. The strongest intensity of PL was observed in epitaxial /spl beta/-FeSi/sub 2/ ultra-thin films on BF/sub 2//sup +/-implanted (111)Si.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306844\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction
Effects of ion-implantation and substrate orientation on nanostructures and photoluminescence (PL) of the ultra-thin /spl beta/-FeSi/sub 2/ films were investigated. Ion-implantation was found to enhance the formation of /spl beta/-FeSi/sub 2/. PL characteristics were strongly affected by implantation species and substrate orientation. The strongest intensity of PL was observed in epitaxial /spl beta/-FeSi/sub 2/ ultra-thin films on BF/sub 2//sup +/-implanted (111)Si.
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